Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in augmented reality glasses. We report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)鈥揻ree electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs.
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